Realization of a Modular Indirect Matrix Converter System Using Normally Off SiC JFETs

摘要

Silicon carbide (SiC) semiconductors are becoming the preferable choice over silicon (Si) semiconductors for power converter applications within the 200 V to 1.2 kV range due to their superior performances. Indirect matrix converters (IMCs) have more potential than traditional back-to-back power converters (BBCs) for achieving higher power densities and longer equipment lifetimes. This paper combines normally off SiC JFETs and the IMC topology to develop a module-based IMC system whose power stage consists of a bidirectional rectifier power module (BPM) and an inverter power module. This combination achieves a power density of approximately 72 kVA/L at the module level. A 5-kVA IMC prototype operating at a switching frequency of 30 kHz and connected to an RL load demonstrates the functionality of the proposed modular IMC system.