Total ionizing dose effects on high resolution (12-/14-bit) analog-to-digital converters

摘要

This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly important for high-accuracy converters. Rebound effects in the thick-oxide MOS devices cause these responses to be different at low and high dose rates, which is a major concern for space applications.