Phase Change Memory and Breakthrough Technologies

摘要

Phase change memory has had issues of overwrite cycle, erase speed, and sensitivity characteristics. We found key technologies and resolved these issues. In this paper, we discuss sensitivity of phase change material, of the conventional optical disc, of femtosecond laser response, and of electrical switching of PRAM. This sensitivity comparison suggests two kinds of phase change process capability: thermal long-range structure change and localized short-range structure change.