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Magnetoresistive read/write channel models

机译:磁阻读/写通道模型

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We studied the magnetic read/write channel with a magnetoresistive (MR) read head at a normalized channel density range of 2.5-3.0, observing and modeling partial erasure and nonlinear transition shift. The asymmetry of the MR head had a significant effect on the channel. We applied the transition-width-reduction model, the partial-erasure-plus-transition-shift model, and the Volterra model to the MR read/write channel, and evaluated the accuracy of these models on the basis of parameters obtained from experimental data. In order to consider the asymmetry of the MR head, we introduced a nonlinear MR head model into the read/write channel. These modified models achieved higher accuracy. Of all the models considered, the Volterra model provides the largest improvement over the linear model.
机译:我们在2.5-3.0的归一化通道密度范围内研究了带有磁阻(MR)读头的磁读/写通道,并观察和建模了部分擦除和非线性转变偏移。 MR磁头的不对称性对通道产生重大影响。我们将过渡宽度减少模型,部分擦除加过渡移位模型和Volterra模型应用于MR读/写通道,并根据从实验数据获得的参数评估这些模型的准确性。为了考虑MR磁头的不对称性,我们在读/写通道中引入了非线性MR磁头模型。这些修改的模型实现了更高的精度。在所有考虑的模型中,Volterra模型相对于线性模型提供了最大的改进。

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