Monolithic Integration of InGaAs–GaAs Quantum-Dot Laser and Quantum-Well Electroabsorption Modulator on Silicon

摘要

Monolithic integration of an In$_{0.5}$ Ga$_{0.5}$As–GaAs quantum-dot laser and an In$_{0.2}$Ga $_{0.8}$As–GaAs quantum-well electroabsorption modulator on silicon is demonstrated for the first time by using molecular beam epitaxy and focused-ion-beam etching techniques. The laser-modulator coupling coefficient is larger than 20% and the depth of modulation is 45% and 100% at 3- and 5-V reverse bias, respectively.