InGaAs/GaAs Core–Shell Nanowires Grown by Molecular Beam Epitaxy

摘要

Au-catalyzed $hbox{In}_{x}hbox{Ga}_{1{rm -}x}hbox{As}$ nanowires (NWs) and $hbox{In}_{x}hbox{Ga}_{1{rm -}x}hbox{As/GaAs}$ core–shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, and V/III elemental flux ratios on NW morphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electron microscopy and their optical properties by low-temperature photoluminescence.