Wafer Level High-Speed Germanium Photodiode Array Integration

摘要

High-density germanium photodiode arrays are integrated on top of a dummy CMOS 200-mm Silicon wafer. Using a conventional available semiconductor fabrication line, the target specifications are reached with a yield exceeding 99% for several thousands of tested photodiodes with respect to bandwidth, responsivity, and dark current. A very low dark current density in the range of 7 mA/cm$^2$ is obtained. A median bandwidth above 9 GHz is reached with a large 30-μm diameter photodiode.