机译:使用双嵌入式光子晶体提高基于GaN的薄膜倒装芯片LED的垂直光提取效率
School of Information Science and Engineering, Shandong University, Jinan, China;
Cavity resonators; Filling; Finite difference methods; Gallium nitride; Light emitting diodes; Metals; Mirrors; Light-emitting diodes (LED); Thin-Film Flip-Chip LED (TFFC LED); embedded photonic crystal (PhC); finite-difference time-domain (FDTD); light extraction efficiency (LEE); light-emitting diodes (LED); thin-film flip-chip LED (TFFC LED);
机译:使用p侧深孔光子晶体提高GaN基薄膜倒装芯片LED的垂直光提取效率
机译:通过Al $ _ {bm x} $ Ga $ _ {{bf 1} {bm-} {bm x}} $ N限制层和嵌入式光子晶体提高GaN基LED的光提取效率
机译:在p-GaN和Ag反射器的界面处嵌入光子晶体,以改善GaN基倒装芯片发光二极管的光提取
机译:双面球形帽状图案蓝宝石衬底提高了GaN基倒装芯片LED的光提取效率
机译:垂直薄膜氮化铟镓发光二极管中的光子晶体提取光。
机译:光子晶体倒装芯片发光二极管的调制带宽和光提取效率的研究
机译:提高具有抗反射界面层的GaN基倒装芯片发光二极管的光提取效率