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Scattering Effect on Optical Performance of Quantum Dot White Light-Emitting Diodes Incorporating SiO₂ Nanoparticles

机译:散射效应掺入SiO 2纳米粒子的量子点白光二极管光学性能

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摘要

The scattering effect plays an important role in improving the optical performance of the quantum dot (QD) white light-emitting diodes (LEDs). A majority of the previous studies have focused on the planar packaging structure only with respect to total internal reflection (TIR). In this study, SiO2 nanoparticles are incorporated into QD-silicone encapsulation of LEDs with semi-spherical lens packaging (SSLP) to exploit their scattering effect. The results show that the radiant efficacy (31.35%@100 mA) and luminous efficacy (87.56 lm/W@100 mA) of QD white LEDs can be optimized using SiO2 nanoparticle concentration (0.1 wt%) and that they increase by 5.04% and 11.08%, respectively, as compared to the conventional structure. A comprehensive ray-tracing simulation validates that the nanoparticles in the SSLP structure lead to severe loss of chip light. On the contrary, the fluorescence light increases due to the enhancement of conversion by QDs. The transmission electron microscopy images and the finite-difference time-domain simulation have been introduced to investigate the surface adsorption of SiO2 nanoparticle. This study indicates that SiO2 incorporation is an effective method to improve the efficiency of QD white LEDs, and provides a better understanding on the scattering effect based on TIR, color conversion, and surface adsorption.
机译:散射效果在提高量子点(QD)白色发光二极管(LED)的光学性能方面起着重要作用。以前的大多数研究仅集中在平面包装结构上仅相对于全内反射(TIR)。在该研究中,将SiO2纳米颗粒掺入具有半球形透镜包装(SSLP)的LED的QD-硅胶包封中,以利用它们的散射效果。结果表明,使用SiO2纳米颗粒浓度(0.1wt%)优化QD白光LED的辐射功效(31.35%至100 mA)和发光功效(87.56Lm / w @ 100mA),它们增加了5.04%与常规结构相比,分别为11.08%。全面的射线跟踪模拟验证了SSLP结构中的纳米颗粒导致芯片光的严重损失。相反,由于QDS的转化增强,荧光光增加。已经引入透射电子显微镜图像和有限差分时域模拟以研究SiO2纳米粒子的表面吸附。本研究表明,SiO2掺入是提高QD白光LED效率的有效方法,并提供基于TIR,颜色转换和表面吸附的散射效果更好的理解。

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  • 来源
    《IEEE Journal of Quantum Electronics》 |2020年第3期|1-9|共9页
  • 作者单位

    South China Univ Technol Natl & Local Joint Engn Res Ctr Semicond Display Guangzhou 510641 Peoples R China|Foshan Nationstar Optoelect Co Ltd Foshan 528000 Peoples R China;

    South China Univ Technol Natl & Local Joint Engn Res Ctr Semicond Display Guangzhou 510641 Peoples R China;

    South China Univ Technol Natl & Local Joint Engn Res Ctr Semicond Display Guangzhou 510641 Peoples R China|Foshan Nationstar Optoelect Co Ltd Foshan 528000 Peoples R China;

    South China Univ Technol Natl & Local Joint Engn Res Ctr Semicond Display Guangzhou 510641 Peoples R China;

    South China Univ Technol Natl & Local Joint Engn Res Ctr Semicond Display Guangzhou 510641 Peoples R China;

    South China Univ Technol Natl & Local Joint Engn Res Ctr Semicond Display Guangzhou 510641 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Light emitting diodes; Nanoparticles; Color; Packaging; Films; Optical scattering; Quantum dot white LED; scattering; SiO2 nanoparticles; semi-spherical lens packaging structure;

    机译:发光二极管;纳米粒子;颜色;包装;薄膜;光散射;量子点白色LED;散射;SiO2纳米粒子;半球形透镜包装结构;

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