An optoelectronic switch based on a triangular-barrier structure

摘要

A GaAs-InGaP triangular-barrier optoelectronic switch, grown bynmetalorganic chemical vapor deposition (MOCVD), is reported in thenpaper. Owing to the avalanche multiplication and hole confinement in thendevice operation, S-shaped negative-differential-resistance (NDR)nperformances are observed in the current-voltage (I-V) characteristicsnunder both normal and reverse operation modes. The device also showed anflexible optical function related to the potential barrier heightncontrollable by incident light. The dependency of the carrier transportnmechanism on illumination, as well as the I-V characteristics atndifferent temperatures, are investigated