Determination of active-region leakage currents in ridge-waveguidestrained-layer quantum-well lasers by varying the ridge width

摘要

This paper is concerned with the investigation of lateral currentnspreading in InGaAsP strained-layer, ridge-waveguidenmultiple-quantum-well (MQW) semiconductor lasers consisting of ninenquantum wells (QWs) and having ridge widths varying from 1.5 to 5 Μm.nBy using a simple analytical model, it is possible to demonstrate thatnas much as 60% of the injected current escapes out of the active regionnof a 1.5-Μm laser at threshold. For the first time, such an analysisnis extended into the above-threshold regime to examine the effects ofnlateral current spreading on the external differential efficiency