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首页> 外文期刊>IEE proceedings. Part G >Modelling output waveform and propagation delay of a CMOS inverter in the submicron range
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Modelling output waveform and propagation delay of a CMOS inverter in the submicron range

机译:在亚微米范围内模拟CMOS反相器的输出波形和传播延迟

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摘要

An accurate, analytical model is presented for the evaluation of the CMOS inverter delay in the submicron regime. Following an exhaustive analysis of the inverter operation, accurate expressions of the output response to an input ramp are derived, which result in the analytical calculation of the propagation delay. These expressions are valid for all the inverter operation regions and input waveform slopes, and take into account the influences of the short-circuit current and the gate-drain coupling capacitance. The effective output transition time of the inverter is determined, in order to map the real output waveform to a ramp waveform for the model to be applicable to CMOS gate chains. The results are in very good agreement with SPICE simulations.
机译:提出了一种精确的分析模型,用于评估亚微米状态下的CMOS反相器延迟。在对逆变器运行进行详尽的分析之后,得出了对输入斜坡的输出响应的精确表达式,从而可以对传播延迟进行解析计算。这些表达式对于所有逆变器操作区域和输入波形斜率均有效,并考虑了短路电流和栅极-漏极耦合电容的影响。确定反相器的有效输出转换时间,以便将实际输出波形映射到适用于CMOS门链的模型的斜坡波形。结果与SPICE仿真非常吻合。

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