Novel 1-V full-swing high-speed BiCMOS circuit using positive feedback base-boost technique

摘要

A novel 1-V full-swing BiCMOS logic circuit, using a positive feedback base-boost technique for high-speed applications, is described. Simulation results show that the circuit outperforms the best existing non-complementary BiCMOS circuits in terms of speed, power consumption and chip area. Based on 0.35 /spl mu/m BiCMOS technology, the proposed circuit offers 49% delay reduction with negligible increase in power dissipation over the CMOS circuit at a supply voltage of 1 V and a load capacitance of 1pF. The crossover capacitance of the proposed circuit is as low as 0.1 pF, and experimental results confirm its circuit operation.