Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy

摘要

We have carried out a double-crystal X-ray diffraction (DCXRD) study on ternary In_(1-x)Ga_xAs/InP and quaternary In_(1-x)Ga_xAs_yP_(1-y) /InP strained multi-quantum well (MQW) structures on (001) InP substrates grown by chemical beam epitaxy. The presence of well-defined higher-order harmonics in the DCXRD results and also the presence of intense and sharp peaks in the low- and room-temperature photoluminescence measurements confirm the high quality of strained MQW structures. This is further supported by the observation of defect-free interfaces in transmission electron microscope photographs. By comparing the DCXRD measurements with X-ray simulation results, we could obtain layer thicknesses and profiles of perpendicular strains relative to the InP barrier.