High output power GaInAsP/InP superluminescent diode at 1.3 mu m

摘要

The authors have developed a 1.3 mu m superluminescent diode using a revolutionary structure. A light diffusion surface is placed diagonally on the active layer within the device to suppress the lasing action. Superluminescent diode characteristics were achieved in the range 0-50 degrees C, and the coupled power into a single-mode fibre reached 1 mW.