Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination

摘要

A novel method is presented to determine Si-SiO/sub 2/ interface recombination parameters. The device used is a polysilicon-oxide-semiconductor capacitor with a microscale central junction (a gate-controlled point-junction diode). Data analysis has been performed using a numerical scheme to find a quasi-exact solution for the current combining at the interface. It was found that the interface recombination parameters depend only weakly on trap energy in a wide range around midgap. The cross-section for capturing electrons was found to exceed the cross-section for capturing holes by a factor of 10/sup 2/ to 10/sup 3/.