On-State Drain Current Modeling of Large-Grain Poly-Si TFTs Based on Carrier Transport Through Latitudinal and Longitudinal Grain Boundaries

摘要

An analytical on-state drain current model of large-grain polycrystalline silicon thin-film transistors (polysilicon TFTs) is presented, based on the carrier transport through latitudinal and longitudinal grain boundaries. The model considers an array of square grains in the channel, with the current flowing along the longitudinal grain boundaries or through the grains and across the latitudinal grain boundaries. Application of the proposed model to excimer lased annealed polysilicon TFTs reveals that, at low gate voltages in the moderate inversion region, the longitudinal grain boundaries influence the effective carrier mobility and the drain current. As the gate voltage increases, the latitudinal grain boundaries have larger impact to the current flow due to reduction of the potential barrier at the grain boundaries. The effect of the laser energy density on the quality of the grains and grain boundaries is investigated.