Electrical TCAD Simulations of a Germanium pMOSFET Technology

摘要

A commercial technology computer-aided design device simulator was extended to allow electrical simulations of sub-100-nm germanium pMOSFETs. Parameters for generation/recombination mechanisms (Shockley–Read–Hall, trap-assisted tunneling, and band-to-band tunneling) and mobility models (impurity scattering and mobility reduction at high lateral and transversal field) are provided. The simulations were found to correspond well with the experimental $I$– $V$ data on our Ge transistors at gate lengths down to 70 nm and various bias conditions. The effect of changes in halo dose and extension energies is discussed, illustrating that the set of models presented in this paper can prove useful to optimize and predict the performance of new Ge-based devices.