In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation

摘要

Simulations of germanium-on-insulator fully-depleted pMOSFET have been performed from process to device using 2D Silvaco software and compared with experimental results. A comprehensive study of these experimental results allows enlightening the specificity of GeOI devices and leads to a good description of electrical output characteristics at low and high drain-to-source voltage and for various gate lengths. More specifically, the adaptation of mobility model from silicon to germanium, a correct description of interface trap densities and a good consideration of leakage current mechanisms are the main challenges addressed in this paper for GeOI pMOSFET simulation.