Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations

摘要

A new relaxation-time-approximation-based nonquasi-static (NQS) MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static description of the MOSFET. The model is implemented in two widely used circuit simulators and is tested for speed and convergence. It is verified by comparison with technology computer-aided design simulations and experimental data and by application of a recently developed benchmark test for NQS MOSFET models.