A Compact RF CMOS Modeling for Accurate High-Frequency Noise Simulation in Sub-100-nm MOSFETs

摘要

A compact RF CMOS model incorporating an improved thermal noise model is developed. Short-channel effects (SCEs), substrate potential fluctuation effect, and parasitic-resistance-induced excess noises were implemented in analytical formulas to accurately simulate RF noises in sub-100-nm MOSFETs. The intrinsic noise extracted through a previously developed lossy substrate de-embedding method and calculated by the improved noise model can consistently predict gate length scaling effects. For 65- and 80-nm n-channel MOS with $f_{T}$ above 160 and 100 GHz, ${rm NF}_{min}$ at 10 GHz can be suppressed to 0.5 and 0.7 dB, respectively. Drain current noise $S_{ rm id}$ reveals an apparently larger value for 65-nm devices than that for 80-nm devices due to SCE. On the other hand, the shorter channel helps reduce the gate current noise $S_{rm ig}$ attributed to smaller gate capacitances. Gate resistance $R_{g}$-induced excess noise dominates in $S_{rm ig}$ near one order higher than the intrinsic gate noise that is free from $R_{g}$ for 65-nm devices. The compact RF CMOS modeling can facilitate high-frequency noise simulation accuracy in nanoscale RF CMOS circuits for low-noise design.