Modeling the Partition of Noise From the Gate-Tunneling Current in MOSFETs

摘要

Expressions for the spectral densities of the gate/source and gate/drain noise currents caused by current flow through the gate oxide of MOSFETs are derived. It is shown that these noise currents can also be expressed in terms of equivalent gate and drain noise currents, and by linearizing the position dependence of the gate current density, simple analytic expressions for these equivalent noise currents and their correlation are obtained in terms of the total gate current and the drain/source partition ratio. It is also shown that the predictions of this simple theory are consistent with published experimental data and results from numerical simulations.