首页> 外国专利> Circuit for reducing 1/f noise in MOSFETs enables continuous operation of transistors without changing between operating and rest states - has periodic current and/or voltage source(s) associated with MOSFET(s) so working point oscillates about constant working point to reduce 1/f noise

Circuit for reducing 1/f noise in MOSFETs enables continuous operation of transistors without changing between operating and rest states - has periodic current and/or voltage source(s) associated with MOSFET(s) so working point oscillates about constant working point to reduce 1/f noise

机译:用于降低MOSFET中的1 / f噪声的电路可实现晶体管的连续操作,而无需在工作状态和静止状态之间进行切换-具有与MOSFET相关的周期性电流和/或电压源,因此工作点在恒定工作点附近振荡以降低1 / f噪音

摘要

The circuit has at least one d.c. current and/or at least one DC voltage source associated with at least one MOSFET (T1) for setting a constant working point and at least one periodically oscillating current and/or voltage source associated with at least one MOSFET so tat the working point oscillates about the constant working point to alter the changes in charge at fault points in the oxide of the MOSFET that can lead to 1/f noise.
机译:该电路具有至少一个直流电。与至少一个MOSFET(T1)关联的电流和/或至少一个直流电压源(T1)用于设置恒定的工作点,并且与至少一个MOSFET关联的至少一个周期性振荡的电流和/或电压源使工作点振荡约恒定的工作点,以改变MOSFET氧化物故障点处的电荷变化,这会导致1 / f噪声。

著录项

  • 公开/公告号DE10001124C1

    专利类型

  • 公开/公告日2001-06-07

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2000101124

  • 发明设计人 BREDERLOW RALF;THEWES ROLAND;

    申请日2000-01-13

  • 分类号H01L23/58;H03F3/45;

  • 国家 DE

  • 入库时间 2022-08-22 01:09:59

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