1.5-kV and 2.2-m (Omega ) -cm (^{2}) Vertical GaN Transistors on Bulk-GaN Substrates

摘要

In this letter, vertical GaN transistors fabricated on bulk GaN substrates are discussed. A threshold voltage of 0.5 V and saturation current >2.3 A are demonstrated. The measured devices show breakdown voltages of 1.5 kV and specific on-resistance of 2.2 m (Omega ) -cm (^{2}) , which translates to a figure-of-merit of (V_{rm BR}^{2}/R_{mathrm{{scriptstyle ON}}} sim 1 times 10^{9}) V (^{2}~Omega ^{-1}cdot {}) cm (^{-2}) .