p-MOSFET and n-MOSFET Prepared by ICP-Assisted Hot Wire Implantation Doping Technique

摘要

In this letter, p-type and n-type metal-oxide- semiconductor field-effect transistors (MOSFETs) were fabricated using an inductively coupled plasma-assisted hot wire implantation doping technique. A complementary metal-oxide- semiconductor (CMOS) device that combines pand n-MOSFETs was also fabricated. The obtained junction depth of the p-MOSFETs was ~45 nm. The subthreshold slope and ON-OFF current ratio of the p-MOSFET were ~0.18 V/decade and over 104, respectively. The measurements made of the CMOS device show that it is a good inverter.