RF transistors use LDMOS technology for better saturation

摘要

STMicroelectronics' new RF power transistors use a proprietary technology that increases performance, ruggedness, and reliability in applications such as government communications, private mobile radio for use by emergency services, and L-band satellite-uplink equipment. Equipment such as wireless base stations and repeaters must achieve high RF power output at high frequencies and produce low distortion. These conflicting targets can complicate design and impose extra costs. LDMOS (laterally diffused metal-oxide-semiconductor) technology has proved successful in The LET family of RF transistors uses ST's latest STH5P LDMOS technology to achieve increased power saturation, which minimizes distortion at higher power levels.