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Comparator directly controls power-MOSFET gate

机译:比较器直接控制功率MOSFET栅极

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摘要

It is common practice to power a MOSFET with a comparator and with an unregulated voltage and to power the comparator driving it from a regulated one (Figure 1). Many loads are insensitive to driving voltage, so it would be a waste of money and power to use a regulated supply to drive the FET. It is also common practice to add resistors R_1 and R_2 to the comparator to put hysteresis in the operation, making the circuit less susceptible to noise, especially with slowly changing signals. This circuit's comparator changes with changes in the unregulated power supply. You can correct this problem by adding diode D_2 and resistor R_5 to the circuit (Figure 2). This approach isolates the hysteresis circuit from the unregulated output and instead drives it from the same regulated supply that drives the comparator. When the comparator is on, it drives the FET just as the original circuit does, pulling the P-channel FET gate toward ground. In both cases, you connect zener diode D_1 to the FET gate to avoid exceeding the gate-to-source voltage.
机译:通常的做法是用一个比较器和一个未稳压的电压为MOSFET供电,并通过一个稳压器为比较器驱动MOSFET(图1)。许多负载对驱动电压不敏感,因此使用稳压电源驱动FET将浪费金钱和功率。通常的做法是在比较器中增加电阻器R_1和R_2,以使磁滞进入工作状态,从而使电路不易受到噪声的影响,尤其是在信号缓慢变化的情况下。该电路的比较器随未稳压电源的变化而变化。您可以通过在电路中添加二极管D_2和电阻R_5来纠正此问题(图2)。这种方法将滞后电路与非稳压输出隔离开,而是从驱动比较器的同一稳压电源驱动它。当比较器打开时,它像原始电路一样驱动FET,将P沟道FET栅极拉至地。在两种情况下,都将齐纳二极管D_1连接到FET栅极,以避免超过栅极至源极的电压。

著录项

  • 来源
    《Electrical Design News》 |2011年第21期|p.44-45|共2页
  • 作者

    Peter Demchenko;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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