Carrier redistribution analysis of gate-biased SiC power-MOSFET using super-higher-order scanning nonlinear dielectric microscopy

摘要

Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.