Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

摘要

Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compactlight source with unique advantages of ultralow energy consumption and small footprint forthe next generation of Si-based on-chip optical interconnects. However, the significantmaterial dissimilarities between III-V materials and Si are the fundamental roadblock forconventional monolithic III-V-on-silicon integration technology. Here, we demonstrateultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si(001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantumdotPC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 μW and alarge spontaneous emission coupling efficiency up to 18% under continuous-wave conditionat room temperature. This work establishes a new route to form the basis of future monolithiclight sources for high-density optical interconnects in future large-scale silicon electronicand photonic integrated circuits.