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首页> 外文期刊>Journal of the Ceramic Society of Japan >Synthesis of gallium nitride nano-particles by ammonia nitridation of mixed β-gallium oxide and gallium nitride powders
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Synthesis of gallium nitride nano-particles by ammonia nitridation of mixed β-gallium oxide and gallium nitride powders

机译:混合β-镓氧化镓氮化镓氮化镓纳米颗粒的合成及氮化镓粉末

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Gallium Nitride nano-particles (GaN NPs) are synthesized by a simple nitridation method. A mixture of commercially available β-Gallium Oxide (β-Gasub2/subOsub3/sub) and GaN powders with about 5 μm particle size was heated at temperatures ranging from 700–1,000 °C in an ammonia (NHsub3/sub) atmosphere for 1 h. In the powder mixture, the β-Gasub2/subOsub3/sub particles converted to GaN NPs agglomerates, while the GaN particles are slightly grown. When the mixture was heated in the NHsub3/sub atmosphere at 900 °C, GaN NPs varying from 30 to 50 nm and microsized GaN particles were obtained.
机译:通过简单的氮化方法合成氮化镓纳米颗粒(GaN NPS)。以700-1,000°的温度加热市售β-镓氧化物(β-ga 2 o 3 )和GaN粉末的混合物在温度范围内加热粒度。 C在氨中(NH 3 )气氛1小时。在粉末混合物中,β-Ga 2 O 3 颗粒转化为GaN nps附聚物,而GaN颗粒略微生长。当将混合物在900℃下在NH 3 /亚>气氛中加热时,获得从30至50nm的GaN NPS和微硫酸微颗粒。

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