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Effect of Boron Doping on Diamond Film and Electrochemical Properties of BDD According to Thickness and Morphology

机译:硼掺杂对BDD厚度和形态学的金刚石膜和电化学性能的影响

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Diamond coating using hot-filament chemical vapor deposition (HFCVD) is now widely used in many fields. The quality of the diamond film and many factors determine the success of the coating, such as temperature, time, and pressure during coating. The purpose of this study was to produce coated boron-doped diamond (BDD) films by doping boron in the diamond film and to assess them through comparative analysis with foreign acid BDD, which is widely used as a water-treatment electrode in the present industry. The bending of the titanium substrate due to the high temperature during the diamond deposition was avoided by adding an intermediate layer with a columnar structure to niobium film. The filament temperature and pressure were determined through preliminary experiments, and BDD films were coated. The BDD film deposition rate was confirmed to be 100 nm/h, and the potential window increased with increasing thickness. The electrochemical activation and catalytic performance were confirmed according to the surface characteristics. Although the high deposition rate of the BDD coating is also an important factor, it was confirmed that conducting coating so that amorphous carbonization does not occur by controlling the temperature during coating can improve the electrochemical properties of BDD film.
机译:使用热丝化学气相沉积(HFCVD)的金刚石涂层现在广泛用于许多领域。钻石薄膜的质量和许多因素决定了涂层期间涂层的成功,例如温度,时间和压力。本研究的目的是通过在金刚石膜中掺杂硼生产涂覆的硼掺杂的金刚石(BDD)膜,并通过与外甲BDD的比较分析来评估它们,该基础分析广泛用作本行业中的水处理电极。通过将具有柱状结构的中间层加入到铌膜中,避免了由于金刚石沉积期间的高温引起的钛基板的弯曲。通过初步实验确定灯丝温度和压力,并涂覆BDD膜。将BDD膜沉积速率确认为100nm / h,并且电位窗口随着厚度的增加而增加。根据表面特征确认电化学活化和催化性能。虽然BDD涂层的高沉积速率也是一个重要因素,但是证实导电涂层使得通过控制涂层期间的温度不会发生无定形碳化可以改善BDD膜的电化学性质。

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