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Investigation of boron and yttrium doping effect on structural, electrical and optical properties of sol-gel spin coated SnO2 thin films

机译:硼和钇掺杂对溶胶-凝胶旋涂SnO 2 薄膜的结构,电学和光学性能的影响

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In this study, B and Y doped SnO2 thin films were prepared by sol-gel spin coatingmethod. The structural, electrical and optical properties of doped SnO2 were investigatedas a function of B and Y doping content. From XRD analysis, it was seen that the filmshad hetero-phase structure with cubic, orthorhombic, tetragonal and (111) cubic phase wasthe most striking phase for B and Y doped films, except for 7 at. % Y doped SnO2 films. Itwas seen from electrical measurement that sheet resistance values increased with B and Ydoping content. The optical properties of films were extensively investigated as a functionof B and Y doping content. And it was found that the optical transmittance, reflectance,extinction coefficient, refractive index, band gap and Urbach energy values depended on Band Y doping concentration. Also, it was observed that B doped films had the betterstructural, electrical and optical properties than Y doped films.
机译:在这项研究中,通过溶胶-凝胶旋涂法制备了B和Y掺杂的SnO2薄膜。研究了掺杂的SnO2的结构,电学和光学性质随B和Y掺杂量的变化。从X射线衍射分析可以看出,立方晶,正交晶,四方晶和(111)立方晶相的膜阴影异相结构是掺杂B和Y的薄膜中最引人注目的相,除了7 at。 %Y掺杂的SnO 2膜。从电学测量可以看出,薄层电阻值随着B和Y掺杂含量的增加而增加。薄膜的光学性质作为B和Y掺杂含量的函数被广泛研究。并发现光的透射率,反射率,消光系数,折射率,带隙和Urbach能量值均取决于Band Y掺杂浓度。而且,观察到掺B的膜比掺Y的膜具有更好的结构,电和光学性能。

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