Behaviour of Semi-Insulating GaAs Energy Levels

摘要

The behaviour of EL2 intrinsic defect in the Semi-Insulated (SI) undoped and Cr-doped GaAs is studied by measuring the Dember effect short circuit current. Appropriate illumination with peak in the 1100 nm region results in the transition of the EL2 state to its metastable one (EL2M). Of major importance is the Cr concentration, which is influencing the photoconductivity spectra, as in high concentrations its contribution in the photoconductivity overlaps the EL2 contribution.