In present work, two-dimensional g-C~(3)N~(4) was used to modify TiO~(2) nanorod array photoanodes for CdS quantum dot-sensitized solar cells (QDSSCs), and the improved cell performances were reported. Single crystal TiO~(2) nanorods are prepared by hydrothermal method on transparent conductive glass and spin-coated with g-C~(3)N~(4). CdS quantum dots were deposited on the g-C~(3)N~(4) modified TiO~(2) photoanodes via successive ionic layer adsorption and reaction method. Compared with pure TiO~(2) nanorod array photoanodes, the g-C~(3)N~(4) modified photoanodes showed an obvious improvement in cell performances, and a champion efficiency of 2.31?% with open circuit voltage of 0.66?V, short circuit current density of 7.13?mA/cm_(2), and fill factor (FF) of 0.49 was achieved, giving 23?% enhancement in cell efficiency. The improved performances were due to the matching conduction bands and valence bands of g-C~(3)N~(4) and TiO~(2), which greatly enhanced the separation and transfer of the photogenerated electrons and holes and effectively suppressed interfacial recombination. Present work provides a new direction for improving performance of QDSSCs.
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