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Porous Graphene Oxide Prepared on Nickel Foam by Electrophoretic Deposition and Thermal Reduction as High-Performance Supercapacitor Electrodes

机译:电泳沉积和热还原法在镍泡沫上制备高性能氧化石墨烯作为高性能超级电容器电极

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A simple electrophoretic deposition method was developed to prepare graphene oxide (GO) films on the frameworks of nickel foam without any conductive agents and polymer binders. Then, GO was transformed into thermally-reduced graphene oxide (RGO) at an appropriate temperature. The effects of deposition voltage and thermal reduction temperature on the electrochemical properties of RGO were investigated by cyclic voltammetry (CV) and galvanostatic charge/discharge. The appropriate combination of deposition voltage and thermal reduction temperature was established. Moreover, scanning electron microscopy, thermal gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy, and X-ray diffractometry were applied to validate the results, which showed that the highest specific capacitance of RGO was obtained when the deposition voltage was 60 V and the thermal reduction temperature was 300 °C. The specific capacitance values calculated by CV and galvanostatic charge/discharge were 139 F·g ?1 (0.005 V·s ?1 ) and 151 F·g ?1 (1 A·g ?1 ), respectively. The specific capacitance of RGO maintained 55% and 66% of the initial value when the scan rate and the current density were increased up to 0.3 V·s ?1 and 10 A·g ?1 , respectively. RGO also displayed an excellent cycling stability by maintaining 98% of the initial specific capacitance after 500 cycles.
机译:开发了一种简单的电泳沉积方法,可以在泡沫镍的骨架上制备氧化石墨烯(GO)膜,而无需任何导电剂和聚合物粘合剂。然后,在适当的温度下将GO转变为热还原氧化石墨烯(RGO)。通过循环伏安法(CV)和恒电流充放电研究了沉积电压和热还原温度对RGO电化学性能的影响。确定了沉积电压和热还原温度的适当组合。此外,采用扫描电子显微镜,热重分析,差示热分析,傅立叶变换红外光谱,拉曼光谱和X射线衍射法对结果进行了验证,结果表明,当沉积电压为10V时,RGO的比电容最高。 60 V,热还原温度为300°C。由CV和恒电流充放电计算出的比电容值分别为139F·g·Ω1(0.005V·s·Ω1)和151F·g·Ω1(1A·g·Ω1)。当扫描速率和电流密度分别增加到0.3 V·sΩ1和10 A·gΩ1时,RGO的比电容保持初始值的55%和66%。 RGO在500次循环后仍能保持98%的初始比电容,从而显示出出色的循环稳定性。

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