Ferromagnetism in Thin Films of Germanium and Silicon Supersaturated by Manganese or Iron Impurities

摘要

We inform an opportunity of a laser synthesis of the diluted magnetic semiconductors on the basis of germanium and silicon, doped by manganese or iron till 10-15 at. %. Thin 50-110 nanometers thickness layers Ge and Si were grown on heated up to 200-480?C monocrystal substrates of gallium arsenide or sapphire. The content of a 3d-impurity was measured by x-ray spectral method. The ferromagnetism of layers, high magnetic and acceptor activity of Mn in Ge, of Mn and Fe in Si were appeared in observation at 77-500 K of Kerr effect, abnormal Hall effect, high hole conductivity and anisotropic ferromagnetic resonance (FMR). On the FMR data the Curie point of Ge:Mn , Si:Mn on GaAs substrates and Si:Fe on Al2O3 were not lower 420, 500 and 220 K, respectively.