Alternative-Current Electrochemical Etching of Uniform Porous Silicon for Photodetector Applications

摘要

The twining of alternative-current (AC) with electrochemical etching (ECE) to fabricate porous silicon(PS) is studied. The porosity percentage is obtained by gravimetric analysis. The effect of different2 current densities; 20, 25 and 30 mA/cm at 30 min on morphology and electrical properties of PS havebeen investigated. The electrical properties of I-V characteristics, Schottky barrier height,photoresponse and resposivity of PS are analyzed. The quantum efficiency is measured under differentcurrent densities. The obtained results showed quite distinguished results for best performance ofphotodetectors.