Pulse Electrodeposition and Characterization of Mox Wl-x Se2 Thin Films

摘要

The layer type Structure compounds MX2 (M=Mo, W: X=S, Te, Se) have aroused much attention in the last ten years because of their Possible application as photovoltaic and photoelectrocatalytic solar energy converters. MoxW1-x Se2 coated glass substrates from an ammoniacal solution of H2WO4, He MoO4 and SeO2 under galvanostatic conditions. The growth kinetics of the film was studied and the deposition parameters such as duty cycle electrolyte bath concentration, bath temperature, time of deposition, deposition current, pH of the electrolyte, were optimized X- ray analysis showed the presence of highly textured Mox W1-x Se2 film with hexagonal structure.The optical absorption spectra show that the material has an indirect band gap. The electrical conductivity measurements were carried and the semiconductor parameters such as the activation energy, trapped energy state and the barrier height were evaluated.