Dielectric Function in Highly doped GaN Semiconductor

摘要

Inverse of Dielectric Function of highly doped GaN has been calculated by using Lindhard formalism. For simplicity collisional damping, nonparabolicity and the coupling between various electrons and holes were neglected. The inverse of the dielectric function for both Fermi- Dirac and Maxwell Boltzman distribution showed antiscreening peak at small phonon wave vector. On the contrary, both Thomas Fermi and Debye inverse of dielectric function showed screening as expected at same phonon wave vector. There is a sharp growth in the antiscreening peak in the inverse of dielectric function at carrier temperature 77 K and 300K, accompanied with a singularity at carrier concentration greater than . Key words : dielectric function, GaN and screened optical phonon scattering rate