PROCESS FOR PRODUCING HIGHLY DOPED SEMICONDUCTOR WAFERS, AND DISLOCATION-FREE, HIGHLY DOPED SEMICONDUCTOR WAFERS

摘要

The present invention relates to a method for manufacturing a semiconductor wafer highly doped , electrically in the method of the present invention at least two active dopant is an element belonging to the cognate of the periodic table is used for doping . The invention also relates to a semiconductor wafer doped with at least two dopants it is not displaced , the dopant is electrically active and belongs to the homologous element of the periodic table of . ; semiconductor wafers , non- displaced , the dopant , resistivity , diffusion coefficient , the epitaxial layer