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首页> 外文期刊>IEEE transactions on circuits and systems. II, Express briefs >Multiple Threshold Voltage Design Scheme for CMOS Tapered Buffers
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Multiple Threshold Voltage Design Scheme for CMOS Tapered Buffers

机译:CMOS锥形缓冲器的多阈值电压设计方案

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This brief proposes lower power lower delay design for CMOS tapered buffers. A slight increase in the threshold voltage is shown to have an exponential effect in reducing the total power dissipation. The corresponding increase in the propagation delay is compensated for by increasing the number of buffer stages such that there is still an overall significant reduction in the total power dissipation. As compared to the constant threshold voltage design based on a cost function of $PT^{2}$, the proposed scheme can lead to either a power dissipation reduction of about 70% while maintaining the same delay, or up to 30% in power dissipation with 10% propagation delay reduction, respectively, in 65-nm technology with $V_{rm DD}=1 {hbox {V}}$, minimum size gate capacitance, $C_{g}=1.5 {hbox {fF}}$, and minimum size output capacitance, $C_{0}=1 {hbox {fF}}$. Closed-form expressions that give the optimum threshold voltage and number of stages are presented.
机译:本简介提出了用于CMOS锥形缓冲器的低功耗,低延迟设计。阈值电压的轻微增加显示出在减少总功耗方面具有指数效应。传播延迟的相应增加通过增加缓冲级的数量来补偿,从而总功耗总体上仍显着降低。与基于成本函数$ PT ^ {2} $的恒定阈值电压设计相比,所提出的方案可以导致功耗降低约70%,同时保持相同的延迟,或者功耗高达30%在$ V_ {rm DD} = 1 {hbox {V}} $,最小尺寸栅极电容$ C_ {g} = 1.5 {hbox {fF}}的65 nm技术中,功耗分别降低了10%的传播延迟$和最小尺寸的输出电容$ C_ {0} = 1 {hbox {fF}} $。给出了给出最佳阈值电压和级数的闭式表达式。

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