机译:MnSO_4对化学镀Ni-P薄膜的微观结构和电阻特性的影响及其在PCB内嵌电阻器中的应用
State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People's Republic of China and School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA;
School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA;
School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA;
State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA and Department of Electronic, The Chinese University of Hong Kong, Shatin, Hong Kong, SAR, China;
Embedded resistor; Manganese sulfate; Ni-P thin-film; Printed circuit board; Resistance tolerance of resistor; Temperature coefficient of resistance;
机译:Mn〜(2+)对化学镀Ni-P薄膜电阻的影响及其在嵌入式电阻中的应用
机译:化学镀制备新型多孔Ni-P薄膜:在嵌入式薄膜电阻器中的应用
机译:嵌入印刷电路板的薄膜Ni-P电阻的噪声特性
机译:基于MCM-L的技术的化学镀Ni-P / Ni-W-P薄膜电阻器
机译:二氧化钌的微结构发展和电学性质-玻璃厚膜电阻器-非等温研究(混合电路,电陶瓷,微电子学)。
机译:NiCr和NiCrSi单层和双层纳米薄膜电阻器的物理和电学性质的发展
机译:Effect of microstructure on the Friction properties of the Electroless Ni-p Deposits
机译:Ta sub 2 N - Cr - au和Ta sub 2 N - Cr - pd - au杂化金属化体系的比较 - Dc电性能,电阻器老化,耐腐蚀性和铬层耗尽研究。