首页> 外文期刊>Circuit World >Effects of MnSO_4 on microstructure and electrical resistance properties of electroless Ni-P thin-films and its application in embedded resistor inside PCB
【24h】

Effects of MnSO_4 on microstructure and electrical resistance properties of electroless Ni-P thin-films and its application in embedded resistor inside PCB

机译:MnSO_4对化学镀Ni-P薄膜的微观结构和电阻特性的影响及其在PCB内嵌电阻器中的应用

获取原文
获取原文并翻译 | 示例
           

摘要

Purpose - Nickel phosphorus (Ni-P) thin-films have been electrolessly deposited in an acid-plating bath with the addition of manganese sulfate monohydrate (MSM) to achieve higher resistance for the application of embedded resistor with value beyond 10 KΩ. As this material is being used for fabricating embedded resistors under the addition of MSM, its resistance properties including effects of MSM concentration and plating time on resistances, temperature coefficient of resistance (TCR), and resistance tolerance of embedded resistor were investigated. The paper aims to discuss these issues. Design/methodology/approach - The structure of fabricated Ni-P film was detected by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The properties of substrate, including the surface morphologies, glass transition process and boundary of copper pad and substrate surface, were performed by SEM, dynamic mechanical analysis and optical microscope, respectively. The resistance tolerances of embedded resistors were elaborated from the cases of Ni-P thin-film resistance tolerance and the size effects of resistors, respectively. Findings - The fabricated film was found to be constructed with numerous Ni-P amorphous nanoparticles, which was believed to be the reason of increasing thin-film resistance. The Ni-P thin-films presented over one magnitude order of resistance increasing in the case of MSM concentration varied from 0 to 40g/L For the case of TCRs, Ni-P thin-films deposited with 20g/L MSM exhibited low TCRs of within ± 100ppm/℃ Before TR at temperature elevating from 40 to 160℃, indicating that this Ni-P thin-film belongs to the constant TCR materials according to the military standard. For the tolerance of embedded resistor, the tolerance contributed by Ni-P thin-film was obtained to be 9.8 percent, whereas the geometry tolerances were in the range of 0-20 percent according to the geometries of embedded resistor. Originality/value - For Ni-P thin-film without MSM, its low resistance with around 100 ohm/sq. limit the values of resistor few KH and restricted its widespread application of embedded resistor with higher resistance beyond 10 KΩ. The authors introduced MnSO_4 in Ni-P electroless plating process to improve the low resistance of Ni-P thin-film. The resistance was increased over one order of magnitude after added with 40 g/L MnSO-4. Due to the specific structure, as this material is being used for fabricating embedded resistors, the electrical properties and its application properties to verify its appliance in embedded resistor were systematically investigated by means of SEM, TEM, XRD characterizations, TCRs, resistance tolerance analysis, respectively.
机译:目的-镍磷(Ni-P)薄膜已通过添加一水硫酸锰(MSM)的化学镀在化学镀液中进行化学沉积,以实现更高的电阻,可用于电阻值超过10KΩ的嵌入式电阻器。由于在添加MSM的情况下将该材料用于制造嵌入式电阻器,因此研究了其电阻特性,包括MSM浓度和电镀时间对电阻,电阻温度系数(TCR)和嵌入式电阻器的电阻容限的影响。本文旨在讨论这些问题。设计/方法/方法-通过扫描电子显微镜(SEM)和透射电子显微镜(TEM)检测制成的Ni-P膜的结构。分别通过SEM,动态力学分析和光学显微镜对基板的性能进行了表征,包括表面形貌,玻璃化转变过程以及铜焊盘与基板表面的边界。分别从Ni-P薄膜电阻容限和电阻尺寸效应的角度出发,详细阐述了嵌入式电阻的容限。发现-发现制成的膜由许多Ni-P无定形纳米颗粒构成,这被认为是增加薄膜电阻的原因。在MSM浓度从0到40g / L变化的情况下,Ni-P薄膜的电阻增加了一个数量级。对于TCR,用20g / L MSM沉积的Ni-P薄膜的TCR较低。在温度从40升高到160℃之前,在TR之前的±100ppm /℃之内,表明该Ni-P薄膜属于军事标准规定的恒定TCR材料。对于嵌入式电阻器的公差,由Ni-P薄膜贡献的公差为9.8%,而根据嵌入式电阻器的几何形状,几何公差在0-20%的范围内。原创性/价值-对于没有MSM的Ni-P薄膜,其低电阻约为100 ohm / sq。限制了几KH的电阻值,并限制了其在10KΩ以上的更高电阻的嵌入式电阻的广泛应用。作者在Mn-P化学镀工艺中引入了MnSO_4,以提高Ni-P薄膜的低电阻。加入40 g / L MnSO-4后,电阻值增加了一个数量级。由于结构特殊,该材料正被用于制造嵌入式电阻器,因此通过SEM,TEM,XRD特性,TCR,电阻容限分析,分别。

著录项

  • 来源
    《Circuit World》 |2014年第2期|45-52|共8页
  • 作者单位

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People's Republic of China and School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA;

    School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA;

    School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA;

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;

    School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA and Department of Electronic, The Chinese University of Hong Kong, Shatin, Hong Kong, SAR, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Embedded resistor; Manganese sulfate; Ni-P thin-film; Printed circuit board; Resistance tolerance of resistor; Temperature coefficient of resistance;

    机译:嵌入式电阻;硫酸锰;Ni-P薄膜;印刷电路板;电阻器的电阻容限;电阻温度系数;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号