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Fabrication and field-emission performance of zirconium disulfide nanobelt arrays

机译:二硫化锆纳米带阵列的制备及场发射性能

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Crystal ZrS_2 nanobelt quasi-arrays were fabricated by pyrolysis of the ZrS_3 nanobelt quasi-arrays in vacuum; field-emission measurements show that the ZrS_2 nanobelt arrays are decent field emitters with a turn-on field of ~0.95 V μm~(-1) and a threshold field of 3.6 V μm~(-1). Over the past decade considerable attention has been paid to the preparation and the properties of one-dimensional (lD) nanostructures because of their distinctive geometries, unique physical properties originating from a quantum-confinement effect, and potential application in nanodevices. Field emission (FE) is based on the physical phenomenon of quantum tunneling, during which electrons are injected from a material surface into vacuum under the influence of an applied electric field. Research shows that aligned lD nanostructures with a high packing density can significantly enhance the material FE properties, therefore many field emitters were fabricated into lD nanostructured arrays such as carbon nanotubes, SiC nanocones, and Mo nanowires.
机译:通过在真空中热解ZrS_3纳米带准阵列来制备晶体ZrS_2纳米带准阵列。场发射测量结果表明,ZrS_2纳米带阵列是良好的场发射器,其开启场为〜0.95 Vμm〜(-1),阈值场为3.6 Vμm〜(-1)。在过去的十年中,由于一维(ID)纳米结构的独特几何形状,源自量子约束效应的独特物理特性以及在纳米器件中的潜在应用,已经对一维(ID)纳米结构的制备和性能给予了相当大的关注。场发射(FE)基于量子隧穿的物理现象,在此过程中,在施加的电场的影响下,电子从材料表面注入到真空中。研究表明,具有高堆积密度的对齐的LD纳米结构可以显着增强材料的FE特性,因此许多场致发射体被制成LD纳米结构的阵列,例如碳纳米管,SiC纳米锥和Mo纳米线。

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