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Determination of the Formation Temperature of Si IV in the Solar Transition Region

机译:太阳过渡区Si IV形成温度的确定

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Ratios are derived for typical features of the quiet Sun, such as cell center and network, and are systematically higher than those predicted at the 6.3 * 10~4 K ionization equilibrium temperature of formation of Si IV. For most solar features the ratios imply a temperature of formation of about 8.5 * 10~4 K. The ratios for the faintest features imply a temperature of formation of up to 1.6 * 10~5 K. It is not clear, however, that all the discrepancies between the measured and theoretical ratios are due to a temperature effect. Accurate temperature measurements are important since a large discrepancy from ionization equilibrium has significant implications for the physics of the transition region, such as the possible presence of nonthermal electrons.
机译:该比率是针对安静太阳的典型特征得出的,例如细胞中心和网络,并且系统地高于在形成硅IV的6.3 * 10〜4 K电离平衡温度下预测的比率。对于大多数太阳能特征,该比值意味着约8.5 * 10〜4 K的形成温度。最薄弱的特征比值意味着最高1.6 * 10〜5 K的形成温度。但是,目前尚不清楚测量值与理论值之间的差异是由于温度效应引起的。准确的温度测量非常重要,因为与电离平衡的巨大差异会对过渡区的物理特性产生重大影响,例如可能存在非热电子。

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