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Synthesis and photoelectric characterization of delafossite conducting oxides CuAlO_2 laminar crystal thin films via sol-gel method

机译:铜铁矿导电氧化物CuAlO_2层状晶体薄膜的溶胶-凝胶法合成及光电性能

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摘要

Thin films of delafossite of CuAlO_2 laminar crystals on metal substrates (Ni plates) were prepared by sol-gel processing and subsequent thermal treatment in vacuum. The influence of annealing treatment on surface morphologies and structure of the samples is discussed. Field-emission scanning electron microscope (FESEM) shows the laminar surface architecture of the as-prepared CuAlO_2 thin films. The electrical property of sample was investigated by current-voltage analysis, which indicates that a rectifying junction between CuAlO_2 film and metal substrate is formed and forward current exceeds reverse current by a factor of up to three. Otherwise, the photoelectrochemical characteristics recorded under 250 mW/cm~2 illumination show that the as-prepared thin film electrode which was annealed at 1150℃ for 4 h in vacuum possesses the highest photocurrent density, which is 0.7 mA/cm~2 at 0 V vs Ag/AgCl.
机译:通过溶胶-凝胶工艺和随后在真空中进行热处理,在金属基底(Ni板)上制备了CuAlO_2层状晶体的铜铁矿薄膜。讨论了退火处理对样品表面形貌和结构的影响。场发射扫描电子显微镜(FESEM)显示了所制备的CuAlO_2薄膜的层状表面结构。通过电流-电压分析研究了样品的电性能,这表明在CuAlO_2膜和金属基板之间形成了一个整流结,正向电流比反向电流大三倍。否则,在250 mW / cm〜2的光照下记录的光电化学特性表明,所制备的薄膜电极在真空中于1150℃退火4 h具有最高的光电流密度,在0时为0.7 mA / cm〜2。 V对Ag / AgCl。

著录项

  • 来源
    《Applied Surface Science》 |2010年第21期|P.6441-6446|共6页
  • 作者单位

    State Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

    rnCollege of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, PR China;

    rnState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, PR China;

    State Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

    State Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Qianwei Road Number 10, Changchun Qianjin Street Number 2699, Changchun 130012, PR China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    CuAlO_2; delafossite; sol-gel process; thin film; photoelectrochemical activity;

    机译:CuAlO_2;铜铁矿溶胶-凝胶法薄膜;光电化学活性;

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