机译:n-烷硫醇SAM钝化后半绝缘和n〜+型GaAs(0 01)的表面势垒分析
Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K2R1, Canada Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6, Canada;
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6, Canada;
Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K2R1, Canada;
Self-assembled monolayers,X-ray photoelectron spectroscopy,Surface Fermi level,GaAs;
机译:在GaAs(001)上的正烷醇SAM中表面偶极层势诱导的IR吸收增强
机译:电光研究正构烷硫醇SAM钝化GaAs(001)中的表面俘获效率
机译:GaAs(100)表面的氮化物化学钝化:对Au / GaAs表面势垒结构电特性的影响
机译:GaAs表面的异质外延钝化及其对GaAs外延层和半绝缘材料的光敏光谱和复合参数的影响
机译:正链烷硫醇GaAs(001)界面的电光研究:表面现象及其在基于光致发光的生物传感中的应用。
机译:采用原位表面钝化的GaAs纳米柱阵列太阳能电池
机译:X射线光电子能谱研究(111)B表面上基于AlGaAs / GaAs量子结构的硅中间层的表面钝化