机译:Cs在GaN(0001)表面吸附的理论研究
Institute of Electronic Engineering and Opto-Electric Technology, NJUST, Nanjing 210094, China,Department of Physics, Institute of Bingzhou, Bingzhou, Shandong 256603, China;
Institute of Electronic Engineering and Opto-Electric Technology, NJUST, Nanjing 210094, China;
Institute of Electronic Engineering and Opto-Electric Technology, NJUST, Nanjing 210094, China;
Institute of Electronic Engineering and Opto-Electric Technology, NJUST, Nanjing 210094, China;
Institute of Electronic Engineering and Opto-Electric Technology, NJUST, Nanjing 210094, China;
School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China;
first-principles; Cs/GaN(0001) adsorption system; adsorption energy; electronic structure; work function;
机译:Cs在GaN(0001)和GaN(000(1))表面上的吸附特性的比较研究
机译:Ni在GaN(0001)表面吸附的理论研究
机译:GaN(0001)表面氢吸附的理论研究
机译:TiO2在GaN(0001)表面的吸附理论研究
机译:表面吸附的理论研究:硅(100)-(2 x 1)表面上的硅烷和冰Ih表面上的次氯酸。
机译:基于最陡熵上升量子热力学模拟氨在GaN(0001)重构表面上化学吸附的非平衡过程
机译:“3d过渡金属在表面(0001)GaN上的吸附和扩散。研究使用DFT“/”在GaN(0001)表面上吸附和扩散3d过渡金属。 DFT研究“
机译:GaN(0001)表面吸氢的理论研究。