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Influence of a novel co-doping (Zn + F) on the physical properties of nano structured (111) oriented CdO thin films applicable for window layer of solar cell

机译:新型共掺杂(Zn + F)对可用于太阳能电池窗口层的纳米结构(111)取向CdO薄膜的物理性能的影响

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Un-doped and co-doped (Zn + F) cadmium oxide (CdO) thin films were prepared by modified spray pyrolysis technique using a nebulizer on glass substrates kept at 200 degrees C. They were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy, Hall Effect and photoluminescence (PL) respectively. The thin films were having thickness in the range of 520-560 nm. They were well crystalline and displayed high transparency of about 70% in the visible region. It was clearly seen from the SEM photographs that co-doping causes notable changes in the surface morphology. Electrical study exhibited the resistivity of co-doped CdO thin films drastically fell to 1.43 +/- 10(-4) Omega-cm compared with the un-doped CdO thin film. The obtained PL spectra were well corroborated with the structural and optical studies. The high transparency, wide band gap energy and enhanced electrical properties obtained infer that Zn + F co-doped CdO thin films find application in optoelectronic devices, especially in window layer of solar cells. (C) 2018 Elsevier B.V. All rights reserved.
机译:通过改良的喷雾热解技术,使用雾化器在保持在200摄氏度的玻璃基板上制备未掺杂和共掺杂(Zn + F)的氧化镉(CdO)薄膜。通过X射线衍射(XRD)对它们进行表征, X射线光电子能谱(XPS),扫描电子显微镜(SEM),紫外可见光谱,霍尔效应和光致发光(PL)。薄膜的厚度在520-560nm范围内。它们具有良好的结晶性,并在可见光区域显示约> 70%的高透明度。从SEM照片可以清楚地看出,共掺杂会引起表面形态的显着变化。电学研究表明,与未掺杂的CdO薄膜相比,共掺杂的CdO薄膜的电阻率急剧下降至1.43 +/- 10(-4)Ω-cm。结构和光学研究很好地证实了所获得的PL光谱。 Zn + F共掺杂的CdO薄膜可用于光电器件,特别是太阳能电池的窗口层,因此具有很高的透明性,宽带隙能量和增强的电性能。 (C)2018 Elsevier B.V.保留所有权利。

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