机译:AlGaN太阳能盲紫外线雪崩光电二极管,具有p梯级Alxga1-Xn层和高/低Al含量AlGaN乘法层
Key Laboratory of Public Safety Emergency Information Technology of Anhui Province The 38th Research Institute of China Electronics Technology Group Corporation Hefei 230088 China;
Key Laboratory of Public Safety Emergency Information Technology of Anhui Province The 38th Research Institute of China Electronics Technology Group Corporation Hefei 230088 China;
Key Laboratory of Public Safety Emergency Information Technology of Anhui Province The 38th Research Institute of China Electronics Technology Group Corporation Hefei 230088 China;
Key Laboratory of Public Safety Emergency Information Technology of Anhui Province The 38th Research Institute of China Electronics Technology Group Corporation Hefei 230088 China;
Key Laboratory of Public Safety Emergency Information Technology of Anhui Province The 38th Research Institute of China Electronics Technology Group Corporation Hefei 230088 China;
AlGaN; Avalanche photodiodes; Polarization field; Distributed Bragg reflector;
机译:用高低掺杂和异质电荷层的单独吸收和乘法AlGaN太阳盲雪崩光电二极管
机译:n型AlGaN层在分离和吸收(SAM)GaN / AlGaN雪崩光电二极管的光响应机制中的作用
机译:使用异质结构作为单独的吸收和倍增区域的高增益N面AlGaN太阳盲雪崩光电二极管
机译:带有改良倍增层的偏振增强型背照式AlGaN太阳盲SAM APD中的多余噪声抑制
机译:太阳盲紫外光电探测器,焦平面阵列和可见盲雪崩光电二极管。
机译:在基于AlGaN的深紫外发光二极管的p-AlGaN / n-AlGaN / p-AlGaN电流扩散层上
机译:在基于AlGaN的深度紫外发光二极管的P-AlGaN / N-AlGaN / P-AlGaN电流扩散层