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High-intensity near-field generation for silicon nanoparticle arrays with oblique irradiation for large-area high-throughput nanopatterning

机译:倾斜辐照的硅纳米粒子阵列的高强度近场生成,用于大面积高通量纳米图形

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摘要

We present near-field distributions around an isolated 800-nm silica or silicon nanoparticle, and nanoparticle arrays of 800-nm silica or silicon nanoparticles, on a silicon substrate by the finite-difference time-domain method when 800-nm light is irradiated obliquely to the substrate. Nanopatterning mediated with the nanoparticle system is promising for large-area, high-throughput patterning by using an enhanced localized near-field ablation by the nanoscattered light lens effect. The irradiation area cannot be extended for silica nanoparticles, because the optical field enhancement factor is low. Gold nanoparticles can generate highly enhanced near fields, although at present there are no useful ways to arrange the gold nanoparticles on the substrate at a high throughput. Silicon nanoparticles with high dielectric permittivity have optical characteristics of both silica and gold nanoparticles. The particle arrangement on the Si substrate is technically easy using a wet pulling process. From the calculation, high optical field intensity is acquired with oblique s-polarized irradiation to the substrate under silicon nanoparticle arrays, and the intensity is almost the same as that under gold nanoparticle arrays under the same condition. With this method, high-throughput nanopatterning for a large area would be achievable.
机译:我们通过有限差分时域法在斜入射800 nm光的情况下,在硅基板上呈现了一个孤立的800 nm二氧化硅或硅纳米粒子以及800 nm二氧化硅或硅纳米粒子的纳米粒子阵列附近的近场分布。到基板上。通过使用纳米散射光透镜效应增强的局部近场消融,由纳米颗粒系统介导的纳米图案有望用于大面积,高通量图案形成。由于光场增强因子低,因此无法扩大二氧化硅纳米粒子的照射面积。金纳米颗粒可以产生高度增强的近场,尽管目前尚无有用的方法以高通量将金纳米颗粒布置在基底上。具有高介电常数的硅纳米颗粒具有二氧化硅和金纳米颗粒的光学特性。使用湿拉工艺在硅衬底上的粒子排列在技术上很容易。通过计算,在硅纳米粒子阵列下通过斜向s偏振照射到基板可以获得高的光场强度,并且在相同条件下该强度几乎与金纳米粒子阵列下的强度相同。使用这种方法,可以实现大面积的高通量纳米图案化。

著录项

  • 来源
    《Applied physics》 |2012年第2期|p.323-332|共10页
  • 作者单位

    School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama-shi 223-8522, Japan;

    School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama-shi 223-8522, Japan;

    School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama-shi 223-8522, Japan;

    School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama-shi 223-8522, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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